Industry information
SK Hynix announced the launch of the world‘s first 4D flash memory
Time:2018-08-13 Views:30
The first day of Flash MEMORY SUMMIT which is being held in the United States has ended. There are many highlights.
The second-to-last entry in the Keynote segment is SK Hynix, which ranks fifth in the global market for NAND and second in the world in DRAM.
The first is the technical route selection of 3D NAND. SK Hynix said that CTF (Charge Trap Flash) has smaller area, faster speed and more durable than floating gate (floating gate type) (more P/E times) ).
In fact, Samsung has been using CTF since the first generation of V-NAND 3D flash memory in 2013, and so is Toshiba/Western (SanDisk) BiCS. Of course, Micron/Intel still insists on floating gates, but this does not matter, after all, they have more powerful 3D Xpoint (based on phase change memory, also known as ReRAM magnetoresistive memory).
Next, SK Hynix announced the launch of the world‘s first 4D flash memory.
From the technical demonstration given in the field, the 4D flash memory is very similar to the Xtacking of the previous Yangtze River storage, except that the peripheral circuits (PUC, Peri. Circuits) are under the storage unit. The benefits are three points. One is that the chip area is smaller, and the other is The processing time is shortened, and the third is the cost reduction.
In terms of parameters, the industry‘s first 4D flash memory is V5 512Gb TLC, with 96-layer stacking, I/O interface speed of 1.2Gbps (ONFi 4.1 standard), and an area of ​​13 square millimeters.
BGA package can achieve 1Tb (128GB), module up to 2TB, plug to 2.5 inch U. In 2, it can be 64TB, and it will be sampled in the first half of 2019.
In terms of performance, the V5 4D chip area is 20% smaller than the V4 3D, the read speed is increased by 30%, and the write speed is increased by 25%.
In addition, V5 4D also plans QLC flash memory, through 96-layer stacking, single Die minimum 1Tb, sample production in the second half of next year.
SK hynix‘s internal 4D flash memory has been advanced to a 128-layer stack, and soon it can be 512GB on a single chip, and 8TB on a single chip in 2025. At present, SK Hynix‘s 3D NAND is a 72-layer stack with a maximum of 512Gb (64GB) on a single chip. The first enterprise-grade product, the PE4010, was shipped to Microsoft Azure Server in June this year.