A3R56E40ABF 力积电子256Mb DDR2 SDRAM IC
Specifications:
• Density: 256M bits
• Organization
⎯ 4M words × 16 bits × 4 banks (A3R56E40ABF)
• Package
⎯ 84-ball FBGA(μBGA) (A3R56E40ABF)
⎯ Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Data rate: 1066Mbps/800Mbps(max.)
• 1KB page size (A3R56E40ABF)
⎯ Row address: A0 to A12
⎯ Column address: A0 to A8
• Four internal banks for concurrent operation
• Interface: SSTL_18
• Burst lengths (BL): 4, 8
• Burst type (BT):
⎯ Sequential (4, 8)
⎯ Interleave (4, 8)
• /CAS Latency (CL): 3, 4, 5, 6, 7
• Precharge: auto precharge option for each burst
access
• Driver strength: normal/weak
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 cycles/64ms
⎯ Average refresh period
7.8μs at 0°C ≤ TC ≤ +85°C
3.9μs at +85°C < TC ≤ +95°C
• Operating case temperature range
⎯ TC = 0°C to +95°C
Features:
• Double-data-rate architecture; two data transfers per clock cycle
• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• On-Die-Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation
• Off-Chip Driver (OCD) impedance adjustment is not supported
A3R56E40ABF ZENTEL 256Mb DDR2 SDRAM IC Ordering information:
